Physics

2nd Year Physics Chapter 18 MCQs

For ECAT, MDCAT, NET, and other entrance test preparation, this is the place to get 2nd Year Physics Chapter 18 MCQs with Answers Electronics. This chapter is about semi-conductors. So, the first concept is the p-n junction and its characteristics. After this, we have full and halfway rectification. Then the concepts of specially designed p-n junctions that have different diodes including light-emitting diode, photodiode, and photo voltaic cell. The transistor is a device that runs on this principle. It has single germanium or silicon which is grown in such a way that it has three regions. They are used as an amplifier. Transistors are also used as a switch. There are so many other uses for these types of circuits. There are logic gates that are discussed here. So, start preparing for the entrance test here. Check the important MCQs given below for preparation.

2nd Year Physics Chapter 18 MCQs with Answers Electronics

204

Physics Chapter 18

1 / 20

In a common base transistor, the collector current is 5.488 mA for an emitter current of 5.70 mA, the value of the base current

2 / 20

The band gap in ZnO is 3.2 eV. If an electron from the conduction band combines with a hole in the valence band then the wavelength of the photon emitted is

3 / 20

The gain of a non-inverting amplifier for which R1 = and R2 = 0 is

4 / 20

Open-loop gain of an OP–AMP is

5 / 20

Saturation of operational amplifier means its outputs

6 / 20

The gain of a transistor used as an amplifier in which collector resistance Rc is 5 k, the input resistance between base and emitter 2.5 kΩ, and the value of its β is 100

7 / 20

The output of the operational amplifier (comparator) switches to + Vcc used as a night switch

8 / 20

With the increase in junction temperature, the barrier potential

9 / 20

With the increase in junction temperature, the barrier potential

10 / 20

In a p-n junction having a depletion layer of thickness 10–6 m, the potential across it is 0.1 V. The electric field over there in Vm-1 is

11 / 20

Application of forward bias to a PN junction (Choose incorrect)

12 / 20

The width of the depletion region of an unbiased P-N junction is about

13 / 20

In a transistor, if IB = base current, IE= emitter current and IC = collector current then (choose correct)

14 / 20

The non-inverting amplifier has R2 = 30 k. To obtain a gain of 5 we have a connect R1 of

15 / 20

When an NPN transistor is used as an amplifier, then

16 / 20

When the transistor is used as a switch and the resistance between collector and emitter becomes zero, the transistor switch is

17 / 20

On increasing the reverse bias to a large value in a p-n junction, the diode current

18 / 20

The least doped region in a transistor is

19 / 20

In a full-wave rectifier, the frequency of the input AC. voltage is 50 Hz. The frequency of the output voltage is

20 / 20

The slope of the I – V characteristic curve for a reverse-biased diode is

Post Comment